Puri Optoelectronics officially demonstrated 135lm/W GaN silicon LED

US-Puri Optoelectronics () officially announced its latest laboratory-based research and development achievements: 135 lumens per watt of silicon-based GaN LED.

GaN-on-silicon LEDs technology has long been recognized by the industry as a tool to rapidly reduce LED production costs, and has been the main research and development direction of many companies in the past few years.

The relevant person in charge of Purui Optoelectronics said that its demonstration represents the performance limit of the industry's first commercial silicon substrate LED chip. The operating current of 350mA is only 2.9 volts (or 3.25 volts at 1 amp), the specification is 1.5mm*1.5mm, and the color temperature is 4730K.

This LED is based on an 8-inch silicon wafer. Puri believes that low-cost silicon wafers and mature semiconductor manufacturing can provide a mature process technology, compared with the current mainstream 4-inch sapphire wafers, the cost of silicon wafers will drop by 75%.

Puri also pointed out that the current large-diameter sapphire and silicon carbide substrates are expensive and difficult to process. Once mass-produced, they are sometimes not widely used. The current high LED production cost inhibits the widespread use of LED lighting in home and commercial buildings.

In addition, silicon substrates exhibit low forward voltage and superior heat resistance, making them ideal for high performance, lighting grade applications. At the same time, the 8-inch silicon epitaxial process is well compatible with existing automated semiconductor lines. However, Puri also noted that “when mass production is required, some other materials currently in use need to be improved to eliminate incompatibility with the silicon substrate process.”

Since seeing the silicon substrate will be a revolutionary technology in the LED industry, Dr. Steve, the chief technology officer of Puri, has led the R&D team to quietly focus on the development of GaN-based projects on silicon.

Puri said its performance level in silicon GaN is equivalent to 12-24 months ahead of today's most advanced sapphire-based LEDs.

“Puri’s achievements are a leading edge in our silicon materials and epitaxial process technology,” said Puri’s CEO Bill Watkins. “Significant cost-reduction of silicon-based LED technology will significantly reduce the upfront capital investment in solid-state lighting. In the next two to three years, even in the most price sensitive markets, such as commercial and office lighting, residential applications will quickly and seamlessly translate into solid state lighting."

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