The DRV8305-Q1 device is a gate driver IC for three-phase motor drive applications. The device provides three high precision half-bridge drivers, each capable of driving high-side and low-side N-channel MOSFETs. The charge pump driver supports 100% duty cycle and low voltage operation. The device can withstand load dump voltages of up to 45-V.
The DRV8305-Q1 device includes three bidirectional shunt amplifiers that enable accurate low-side current measurements, variable gain settings, and adjustable offset references.
The DRV8305-Q1 device has an integrated voltage regulator that meets the power requirements of the MCU or other systems. The regulator can be directly connected to the LIN physical interface for low system standby and sleep current.
When switching to prevent current breakdown, the gate driver uses automatic handshake. Accurately detect the VDS of the high-side and low-side MOSFETs to protect the external MOSFET from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configuration such as gain options for shunt amplifiers, single MOSFET overcurrent detection, and gate driver slew rate control.
Device option
DRV8305NQ: Class 1, with reference voltage
DRV83053Q: Class 1, with 3.3V, 50mA LDO
DRV83055Q: Class 1 with 5V, 50mA LDO
DRV8305NE: Class 0 with reference voltage
Main features of DRV8305-Q1
Passed the AEC-Q100 automotive application certification
Environmental operating temperature range:
0 (E) temperature: –40 ° C ~ 150 ° C
1 (Q) grade temperature: –40 ° C ~ 125 ° C
Operating voltage range: 4.4V~45V
1.25A and 1A peak gate drive current
Smart Gate Drive Architecture (IDRIVE and TDRIVE)
Programmable high and low side slew rate control
Charge pump gate driver for 100% duty cycle
3 integrated shunt amplifiers
Integrated 50mA LDO (3.3V and 5V options)
3PWM or 6PWM input control with frequencies up to 200kHz
Single PWM mode commutation function
Serial Peripheral Interface (SPI) for device setup and fault reporting
Thermally Enhanced 48-Pin HTQFP
Protection features:
Troubleshooting and MCU watchdog
Programmable dead time control
MOSFET breakdown prevention
MOSFET VDS overcurrent monitor
Gate driver fault detection
Battery reverse protection support
Minhang home mode support
Overheat alarm and shutdown
DRV8305-Q1 application
Three-phase BLDC and PMSM motors
Automotive fuel pump and water pump
Car fan and blower
Figure 1 Functional Block Diagram of DRV8305-Q1
Figure 2 Typical application circuit diagram of DRV8305-Q1
DRV8305-Q1 EVM automotive three-phase motor gate drive evaluation module
The DRV8305-Q1EVM Evaluation Module (EVM) is a 4.4V~45V, 25A three-phase motor drive and control system based on the DRV8305-Q1 automotive motor gate driver, TMS320F28027 motor control microcontroller and CSD18540Q5B NexFETTM power MOSFET. EVM has multiple test points, interfaces and configurability, allowing us to easily evaluate the DRV8305-Q1.
The EVM provides on-board battery reverse protection with a 3.3V regulated power supply from the TPS7B6933-Q1 LDO, an interface header for all control and feedback signals, and an onboard XDS100v2 emulator. The EVM features a single DC bus and phase power detection, as well as a single low-side shunt sensing for sensorless BLDC control algorithms. The driver stage features short-circuit, thermal, breakdown, and undervoltage protection that can be easily configured via the SPI interface.
The EVM is the ideal evaluation board that can be quickly developed with the DRV8305-Q1, using the InstaSPIN-FOC sensorless control solution and the main software support via MotorWare.
Figure 3 DRV8305-Q1 EVM outline drawing
Main features of DRV8305-Q1 EVM
Operating power supply voltage range: 4.4V~45V
Supports continuous output currents up to 25A
Phase and current feedback for sensorless BLDC control solutions
Comprehensive brushless DC control and driver stage
Onboard XDS100v2 emulator
Evaluation module contains
DRV8305-Q1 Evaluation Board
Micro-USB cable
Figure 4 DRV8305-Q1 EVM block diagram
Figure 5 DRV8305-Q1 EVM circuit diagram
Table 1 DRV8305-Q1 EVM bill of materials
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